Santech is Engaged in Developing with one world Semiconductor gaint new and pioneering Design of 2024 , New Transistors for Ground-Breaking Semiconductors:

New structure transistors for advanced technology node CMOS ICs / complementary metal-oxide-semiconductor integrated circuits (ICs) have mainly relied on structural innovations in transistors.

From planar transistors to the fin field-effect transistor (FinFET) gate-all-around FET (GAAFET), more gate electrodes have been added to three-dimensional (3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore’s law scaling is no longer expected to be applicable to geometrical shrinkage.

Vertical transistor stacking, e.g. in complementary FETs (CFET), 3D stack (3DS) FETs and vertical-channel transistors (VFET), for enhanced density and variable circuit or system design to represents a revolutionary scaling approach for sustained IC development.